efElectricAgingTrendMining synchronousMemoryDatabase.h 吉超博 commit at 2020-11-27

efElectricAgingTrendMining/analysisOfEnvironmentalFactors/synchronousMemoryDatabase.h

@@ -136,3 +136,72 @@ static inline void __indirect_writesl(volatile void __iomem *bus_addr,
 
 static inline unsigned char __indirect_readb(const volatile void __iomem *p)
 {
+	u32 addr = (u32)p;
+	u32 n, byte_enables, data;
+
+	if (!is_pci_memory(addr))
+		return __raw_readb(addr);
+
+	n = addr % 4;
+	byte_enables = (0xf & ~BIT(n)) << IXP4XX_PCI_NP_CBE_BESL;
+	if (ixp4xx_pci_read(addr, byte_enables | NP_CMD_MEMREAD, &data))
+		return 0xff;
+
+	return data >> (8*n);
+}
+
+static inline void __indirect_readsb(const volatile void __iomem *bus_addr,
+				     u8 *vaddr, u32 count)
+{
+	while (count--)
+		*vaddr++ = readb(bus_addr);
+}
+
+static inline unsigned short __indirect_readw(const volatile void __iomem *p)
+{
+	u32 addr = (u32)p;
+	u32 n, byte_enables, data;
+
+	if (!is_pci_memory(addr))
+		return __raw_readw(addr);
+
+	n = addr % 4;
+	byte_enables = (0xf & ~(BIT(n) | BIT(n+1))) << IXP4XX_PCI_NP_CBE_BESL;
+	if (ixp4xx_pci_read(addr, byte_enables | NP_CMD_MEMREAD, &data))
+		return 0xffff;
+
+	return data>>(8*n);
+}
+
+static inline void __indirect_readsw(const volatile void __iomem *bus_addr,
+				     u16 *vaddr, u32 count)
+{
+	while (count--)
+		*vaddr++ = readw(bus_addr);
+}
+
+static inline unsigned long __indirect_readl(const volatile void __iomem *p)
+{
+	u32 addr = (__force u32)p;
+	u32 data;
+
+	if (!is_pci_memory(addr))
+		return __raw_readl(p);
+
+	if (ixp4xx_pci_read(addr, NP_CMD_MEMREAD, &data))
+		return 0xffffffff;
+
+	return data;
+}
+
+static inline void __indirect_readsl(const volatile void __iomem *bus_addr,
+				     u32 *vaddr, u32 count)
+{
+	while (count--)
+		*vaddr++ = readl(bus_addr);
+}
+
+
+/*
+ * We can use the built-in functions b/c they end up calling writeb/readb
+ */